By Ungyu Paik
In the advance of next-generation nanoscale units, better velocity and decrease strength operation is the secret. expanding reliance on cellular pcs, cellular phone, and different digital units calls for a better measure of velocity and tool. As chemical mechanical planarization (CMP) gradually turns into perceived much less as black paintings and extra as a state of the art know-how, it truly is rising because the expertise for attaining greater functionality devices.
Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical homes of nanoparticles in response to every one step within the CMP technique, together with dielectric CMP, shallow development isolation CMP, steel CMP, poly isolation CMP, and noble steel CMP. The authors supply a close consultant to nanoparticle engineering of novel CMP slurry for next-generation nanoscale units under the 60nm layout rule. They current layout suggestions utilizing polymeric ingredients to enhance CMP functionality. the ultimate bankruptcy specializes in novel CMP slurry for the applying to reminiscence units past 50nm technology.
Most books released on CMP specialize in the sprucing method, gear, and cleansing. although a few of these books may possibly contact on CMP slurries, the tools they hide are limited to traditional slurries and none disguise them with the aspect required for the improvement of next-generation units. With its insurance of basic recommendations and novel applied sciences, this e-book can provide professional perception into CMP for all present and next-generation systems.
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Extra resources for Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices
A low ionic strength permits a stronger interaction with the aqueous phase and reduces the driving force for adsorption onto the Si3N4 due to the electrostatic repulsion between neighboring carboxylate groups in the PAA chains. This results in a reduced uptake and a more extended adsorption conformation with fewer attachment points on the Si3N4 surface. In contrast, a high ionic strength results in a stronger, more compact interaction with the Si3N4 surface through nonelectrostatic interactions between the Si3N4 surface and PAA chains.
With the increase of ionic strength, the thickness of PAA adsorbed on the Si3N4 decreased. 4 M KNO3, respectively. Atomic force microscopy (AFM) and Nanospec data show a similar trend; the thickness of PAA decreases as ionic strength increases. This implies that the coiled conformation of PAA forms a dense passivation layer on the Si3N4 film. 16. 17. 4 M KNO3. 4 M KNO3, respectively. As the ionic strength increases, the particle is agglomerated by screening the charges on the particle surfaces, which results in increasing the removal rate.
In addition, the slurry with agglomerated particles was hardly propagated over the whole wafer surface due to the poor stability. 9, sample C has a higher WIWNU and a lower removal rate of wafer edge position than sample A. During the CMP, the agglomerated particles were easily stuck to the wafer surface by the small interactive force between the abrasive and oxide film. It is these sticking particles in particular that induce the surface scratches on the wafer due to the compressive and shear forces between the wafer and pad.
Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices by Ungyu Paik