Mercury Cadmium Telluride Imagers (Handbook of Sensors and by A.C. Onshage PDF

By A.C. Onshage

ISBN-10: 008052401X

ISBN-13: 9780080524016

ISBN-10: 0444827900

ISBN-13: 9780444827906

In components, this booklet describes the evolution of mercury cadmium telluride (HgCdTe) imager buildings established upon released patents and patent functions. the 1st half covers monolithic arrays, and the second one half describes hybrid arrays. every one half has five chapters, with each one rfile put in chronological order, with the files with the earliest precedence positioned first. concentration has been directed on the steps of producing and buildings of imagers.

There is an index on the finish of the booklet containing the patent quantity, the identify of the applicant and the date of booklet of every pointed out document.

This monograph will function an invaluable precis of the patents and patent purposes within the box of mercury cadmium telluride imagers.

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Additional info for Mercury Cadmium Telluride Imagers (Handbook of Sensors and Actuators)

Example text

An electrode 27 is formed on the source region. The surface of the epitaxial layer is covered with a transparent insulating layer 28. A gate electrode 29 is formed via the insulating layer above a portion of the gate region. The impurity concentration of the if-type region 24 is selected to be sufficiently low, so that, when a reverse bias is applied between the source electrode and the Static Induction Transistor Imagers 41 gate electrode, the channel region becomes sufficiently pinched off to produce a potential barrier, and that the height of this potential barrier can be controlled also by the application of a drain voltage.

The p+-type regions 25 and 32 and the intervening n'-type region 36 constitute a pair of current electrode regions and a channel region 36 of an insulated gate transistor. Source electrode 27 of the photo-transistor and drain electrode 34 of the switching transistor are formed. A gate electrode 33 is formed on an insulating layer 28 above the channel region of the switching transistor. An embodiment in which a bipolar transistor is used as a switching transistor instead of an insulting gate transistor is also disclosed.

A distribution of ambipolar carders is photo-electrically generated in the strip. Upon this distribution, a signal distribution which is injected via diodes D~..... D5 may be super-imposed. --o2 Fig. 3 (GB-A-2007909 fig. ,OD,, the outputs O1..... O, of which are electrically connected to diode inputs D~..... D, formed in the substrate 7 of transfer device 3. When the detectors OD are exposed to focussed optical radiation, arnbipolar carders are photo-electrically generated in the substrate material of each detector and caused to drift towards detector diodes O near the end of the detectors.

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Mercury Cadmium Telluride Imagers (Handbook of Sensors and Actuators) by A.C. Onshage


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