E. Yu. L’vova (auth.), Academician D. V. Skobel’tsyn (eds.)'s Electroluminescence / Elektrolyuminestsentsiya / PDF

By E. Yu. L’vova (auth.), Academician D. V. Skobel’tsyn (eds.)

ISBN-10: 1475703139

ISBN-13: 9781475703139

ISBN-10: 1475703155

ISBN-13: 9781475703153

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Additional resources for Electroluminescence / Elektrolyuminestsentsiya / Электролюминесценция: Proceedings (Trudy) of the P. N. Lebedev Physics Institute

Sample text

Silicon carbide seems to be the only currently available material which can be used in high-temperature rectifiers. These rectifiers have very good characteristics even at ambient temperatures exceeding 500°C. The ambient temperature at which a given semiconductor device can operate is determined by the thermal stability and forbidden band width of the material used in that device. The wider the forbidden band of a semiconductor, the higher is the temperature at which a device made of it can operate.

The dependence of the electroluminescence brightness on the forward current through a p - n junction is complex: it is governed by the method used in the fabrication of this junction, the temperature at which the measurements are carried out, the voltage used, and other parameters. At voltages exceeding thep-njunction barrier height, this dependence is usually linear. Such behavior has been reported for germanium [25], silicon [26], and other diodes mentioned in the preceding paragraphs. The brightness is proportional to the current when the following two conditions are satisfied [27]: (a) the injection efficiency is constant (independent of the current); (b) the ratio of the rates of radiative and nonradiative recombination is independent of the inj ection level.

Such generation and recombination are allowed for in the treatment due to Tolpygo and Rashba [6]. They thought it necessary to obtain the solution for the whole of the semiconductor and not only outside the space-charge region, as was done by Shockley. Tolpygo and Rashba considered direct exchange between the allowed bands as the generation and recombination mechanism. 28 A. N. GEORGOBIANI AND V. I. STEBLIN They assumed that the contribution of the processes involving traps was negligible. In this theory, electrons are transferred by thermal fluctuations from the valence to the conduction band.

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Electroluminescence / Elektrolyuminestsentsiya / Электролюминесценция: Proceedings (Trudy) of the P. N. Lebedev Physics Institute by E. Yu. L’vova (auth.), Academician D. V. Skobel’tsyn (eds.)


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