By Giovanni Mattarolo
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Extra resources for Development and Modelling of a Thermophotovoltaic System
7 eV. 73 eV) present good characteristics and performances for TPV applications. 5 eV) for TPV has been investigated only recently and seems attractive for low temperature applications (less than 1200 K). The realization of such cells is still in a first development phase and it is based on quaternary semiconductor alloys: GaInAsSb on InAs substrate and InAsPSb on GaSb or InAs substrate [GAG+ 06] are the two heterostructures proposed for this type of cells. 30 2. 4 Cell cooling system In operating conditions the part of the radiation which is nor reflected neither converted into electric power is absorbed as heat load by the cells.
Compared to normal PV, STPV requires a much smaller cell active area and offers the possibility to reduce the system costs, since the cells are the most expensive component. On the other hand solar concentrators have generally the disadvantage of using only a fraction of all the solar radiation, not being able to concentrate the diffuse and scattered part of the light. Recent studies [V+ 06] showed that system efficiencies of 24% and 29% are possible with respectively GaSb based cells and tandem TPV cells.
Anti-Reflecting layer: it reduces the number of convertible photons reflected by the cells. It is deposited on the front surface of the cell (λ/4 layer). ❼ Back surface cell reflector: layer generally made of gold to send back to the emitter photons which otherwise would pass through the cells. As pointed out in the burner unit section, a fundamental requirement for the components of the system is the resistance to extreme thermal conditions: the emitter and the filter, if this is placed between emitter and cells, must be able to operate at very high temperatures without getting damaged or deteriorating.
Development and Modelling of a Thermophotovoltaic System by Giovanni Mattarolo