Golla Eranna's Crystal growth and evaluation of silicon for VLSI and ULSI PDF

By Golla Eranna

ISBN-10: 1482232820

ISBN-13: 9781482232820

Silicon, as a single-crystal semiconductor, has sparked a revolution within the box of electronics and touched approximately each box of technology and know-how. although on hand abundantly as silica and in a variety of other kinds in nature, silicon is hard to split from its chemicals as a result of its reactivity. As a superb, silicon is chemically inert and sturdy, yet becoming it as a unmarried crystal creates many technological challenges.

Crystal progress and assessment of Silicon for VLSI and ULSI

is one of many first books to hide the systematic development of silicon unmarried crystals and the total evaluate of silicon, from sand to invaluable wafers for gadget fabrication. Written for engineers and researchers operating in semiconductor fabrication industries, this sensible text:

  • Describes various ideas used to develop silicon unmarried crystals
  • Explains how grown single-crystal ingots turn into a whole silicon wafer for integrated-circuit fabrication
  • Reviews diverse how you can overview silicon wafers to figure out suitability for gadget applications
  • Analyzes silicon wafers by way of resistivity and impurity focus mapping
  • Examines the impact of intentional and unintended impurities
  • Explores the defects present in typical silicon-crystal lattice
  • Discusses silicon wafer guidance for VLSI and ULSI processing

Crystal progress and assessment of Silicon for VLSI and ULSI is an important reference for various methods to the choice of the fundamental silicon-containing compound, separation of silicon as metallurgical-grade natural silicon, next purification, single-crystal progress, and defects and assessment of the deviations in the grown crystals.

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Additional info for Crystal growth and evaluation of silicon for VLSI and ULSI

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K. Chu, University of Honk Kong, Tat Chee Avenue, Kowloon, Hong Kong; S. Franssila, Introduction to Microfabrication, John Wiley & Sons, Chichester, 2004 [42], and many other websites available in the literature. 9 Different Devices from Silicon and Circuit Complexity over the Decades Year 1947 1950 1961 1966 1971 1980 1990 2000 Technology Transistor invention Discrete devices SSI MSI LSI VLSI ULSI GSI Approximate number of transistors per chip 1 1 10 100 to 1,000 (1 K) 1,000 to 20 K 20 K to 1,000 K 1,000 K to 10,000 K More than 10,000 K Typical devices Point contact diode Junction transistors, diodes Planar devices, logic gates, flip-flops Counters, multiplexers, adders 8-bit ROM RAM 16-, 32-bit microprocessors Special processors Many more complex circuits Sources:  Data from Wikipedia, the free encyclopedia; T.

This is in addition to the perfect electrical properties it originally possesses. This combination has opened a new field of scientific research coupling both the properties of silicon. 09 μm (90 nm) 65 nm 45 nm 32 nm 30 nm Sources:  Data from Wikipedia, the free encyclopedia; T. F. Shao and F. C. Wang, “Wafer fab manufacturing technology” in ULSI Technology, edited by C. Y. Chang and S. M. , New York, 1996; Lecture notes of Prof. P. K. Chu, University of Honk Kong, Tat Chee Avenue, Kowloon, Hong Kong; S.

Oishi, M. Watanabe, K. Koyama, M. Tanaka, and K. Saegusa, “Process for solar grade silicon production by molten salt electrolysis using aluminum-silicon liquid alloy,” Journal of the Electrochemical Society, 158, E93–E99, 2011. J. -t. Luo, G. M. Haarberg, O. E. -I. Wang, “Electrorefining of metallurgical grade silicon in molten CaCl2 based salts,” Journal of the Electrochemical Society, 159, D155–D158, 2012. 18. -M. 69, January 2000, and the references therein. 19. 44, May 2001. 20. W. Sittenthaler, “Wafer suppliers face dilemma in doing much more with less,” WaferNEWS, 48, July 2005.

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Crystal growth and evaluation of silicon for VLSI and ULSI by Golla Eranna

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